Postdoctoral position in GaN/AlN deposition process and device – FASTGAN project

Job title:

Postdoctoral position in GaN/AlN deposition process and device – FASTGAN project

Company:

Job description

Offer DescriptionThe project focuses on the field of Wide or Ultra-Wide BandGap (WBG) semiconductors, which feature a breakdown voltage significantly higher than that of silicon, enabling them to handle much greater power per unit of surface area or weight. Therefore, they are increasingly sought after as most of the machines around us become electrified. They also play a key role in laser technology and LED lighting.
However, they currently face significant challenges, including high manufacturing costs, difficulties in producing large-area substrates (
8 inches), and limited availability and maturity in the market. Once these obstacles will be overcome, major advancements could be achieved in the electrification of transportation (automotive, rail, aerospace), power grids, and the electrification of industrial processes.
The FASTGAN project (Full scAle low coST GaN technologies), funded by the prematuration program of Insitut Polytechnique de Paris, aims at addressing this point by developing low-cost and large-size GaN/AlN on Silicon devices for power electronics applications using an original growth approach based on plasma.
To achieve this goal, we are seeking a highly motivated postdoctoral researcher for a one-year contract (with opportunity for extension if the project turns into a startup) in the field of III-V semiconductor deposition at the Laboratoire de Physique des Interface et des Couches Minces, Ecole Polytechnique in France.Job description
Within the III-V plasma group of LPICM, the candidate will carry out experiments and device’s development under the supervision of Dr. Karim Ouaras and Dr. Pere Roca i Cabarrocas. The candidate will take part in this exciting project by addressing two topics related to (i) the optimization of GaN/AlN deposition process and (ii) the fabrication of a device prototype based on the grown films:(i) As far as deposition is concerned, the candidate will lead the optimization of the plasma process for improving both the crystal quality and optoelectronic properties of GaN using solid-state characterizations (X-ray diffraction, Scanning/Transmission Electronic Microscopy, Raman, Cathodo-luminescence, Hall Effect…). In this part, a special attention will be paid to both the optimization of the GaN/Si interface trough the integration of a suitable buffer layer, and the doping of the GaN layers. In parallel, the candidate will work on introducing for the first time aluminum precursor into the media to produce AlN and AlGan layers.

(ii) The candidate will lead the fabrication of the prototype device including finalization steps (e.g. contact and passivation) of the structure. Therefore, the candidate will be in charge of the full development of the prototype, from its design to its test, to end up with a device close to the state of the art HEMTS. To address this part of the project, the postdoc might be asked to undertake semiconductor device modeling to explore suitable device architecture according to the grown structure.Where to apply E-mailkarim.ouaras@polytechnique.eduRequirementsResearch Field Engineering » Materials engineering Education Level PhD or equivalentResearch Field Physics » Crystal growth Education Level PhD or equivalentSkills/QualificationsWho we are looking for

• A relevant PhD degree in semiconductor physics, material sciences, or similar.
• Hands-on experience with III-V semiconductor deposition processes (e.g. MOCVD, MBE …), advanced semiconductor characterizations (structural, optical and electrical) and/or interface passivation approaches.
• Experience in electronic device fabrication (i.e. transistors).
• Knowledge of GaN/AlN semiconductors is highly desirable.
• Knowledge of semiconductor device modeling is desirable but not required.
• You are a team player with a high level of motivation, self-initiative and independence, excellence and flexibility to work and deliver results.

Languages ENGLISH Level GoodResearch Field Engineering » Materials engineering Years of Research Experience 1 – 4Additional InformationSelection processPlease send a single file containing your CV + PhD thesis report + cover letter + contact of 2 referencesAdditional commentsSupervisors : Dr. Karim Ouaras and Dr. Pere Roca i CabarrocasWork Location(s)Number of offers available 1 Company/Institute LPICM UMR7647- cnrs / ecole polytechnique Country France GeofieldContact State/ProvinceSelect a State or Province CityPalaiseau WebsiteStreetRoute de saclay Postal Code91128 E-Mailkarim.ouaras@polytechnique.edupere.roca@polytechnique.eduSTATUS: EXPIREDShare this page

Expected salary

Location

Palaiseau, Essonne

Job date

Mon, 06 Jan 2025 04:32:39 GMT

To help us track our recruitment effort, please indicate in your email/cover letter where (vacanciesineu.com) you saw this job posting.