Job title:
Ph. D thesis : epitaxy and characterization of ScAlN alloy for high-frequency electron devices M/W
Company:
Job description
Offer DescriptionThe proposed Ph.D thesis perfectly fits with TWINS project and will consist in the molecular beam epitaxy of ScAlN alloy [3] and the characterization of ScAlN/GaN heterostructures. The main objective will be to correlate growth conditions and heterostructure parameters (alloy composition, thickness) with structural properties (roughness, crystal quality) and electrical properties (carrier density, mobility, electrical traps, piezoelectric response…). For this purpose, X-ray diffraction, atomic force microscopy ( ), test device process in the laboratory cleanroom ( ) and electrical characterizations (Hall effect, I-V and C-V measurements) will be performed. Once the growth and device process optimized, various approaches will be investigated to cointegrate the different parts of the variable frequency filter.
The study will be carried out at CRHEA (Université Côte d’Azur, CNRS, Valbonne, 06) in tight collaboration with partners laboratories. Knowledges in solid-state physics and materials science are necessary. Furthermore, the laboratory is protected by the restricted access regime (ZRRThe impressive piezoelectric properties of ScAlN [1] have made it a very interesting semiconductor alloy for sensors and high-frequency filters based on acoustic waves. Furthermore, this alloy is promising for the fabrication of RF transistors [2]. Indeed, thanks to the large electric polarization induced at the interface of ScAlN/GaN heterostructures, electron gases with densities superior to 3E13/cm² can be generated even with ScAlN barrier thickness well below 10 nm. However, despite these impressive properties, the first demonstration of an RF HEMT (high electron mobility transistor) based on ScAlN was reported lately, in 2019. Since 2020, the epitaxy of the ScAlN alloy is studied at CRHEA and encouraging results have been obtained, including ScAlN/GaN heterostructures grown on silicon which is a substrate of choice for industry.In this context, the TWINS project funded by the French National Research Agency (ANR) aims at combining a ScAlN/GaN HEMT with a surface acoustic wave (SAW) structure to achieve a variable frequency filter operating in the 3-10 GHz frequency range. In a first step, this totally novel approach will necessitate the optimization of the epitaxy, of the device process and the characterization of the two building blocks (transistor and SAW filter). In a second step, various integration routes will be studied to propose a device able to satisfy the 5G telecommunications requirements. For this purpose, the project gathers 3 academic laboratories: CRHEA, Institut Jean Lamour and IEMN.RequirementsResearch Field Engineering Education Level Master Degree or equivalentResearch Field Physics Education Level Master Degree or equivalentResearch Field Technology Education Level Master Degree or equivalentLanguages FRENCH Level BasicResearch Field Engineering Years of Research Experience NoneResearch Field Physics Years of Research Experience NoneResearch Field Technology Years of Research Experience NoneAdditional InformationWebsite for additional job detailsWork Location(s)Number of offers available 1 Company/Institute Centre de recherche sur l’hétéroepitaxie et ses applications Country France City VALBONNE GeofieldWhere to apply WebsiteContact CityVALBONNE WebsiteSTATUS: EXPIRED
Expected salary
Location
Valbonne, Alpes-Maritimes
Job date
Sat, 06 Apr 2024 00:46:46 GMT
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